Quantum-confined Stark effect at 1.3 μm in Ge/SiGe quantum-well structures
نویسندگان
چکیده
We demonstrate a room-temperature strong quantum confinement Stark effect (QCSE) in Ge/SiGe multiple quantum wells (MQW) heterostructures, embedded in PIN diode. The device is designed to operate at 1.3μm, and QCSE is shown by photocurrent measurement in a surface illuminated device.
منابع مشابه
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon.
We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater th...
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